HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces
The SiC electric heating elements are mainly made of high quality green silion carbide, it's a kind of tubular and non-metallic high temperature Electric Heating Element produced by processing of msaking semifinished product, high-temperature silicification, re-crystallization. ED Series Equal Diameter Silicon Carbide Rods are advanced replacements for traditional thick-end silicon carbide rods. Featuring uniform diameter structure, these rods deliver 30% lower end resistance than traditional models, significantly reducing thermal stress and prolonging service life. Ideal for high-temperature applications up to 1450°C, they excel in energy efficiency with 15-20% power savings.
SiC electric heating element is widely used in high temperature furnaces and other electric heating equipment of magnetic materials, powder metallurgy, ceramics, glass, metallurgy, machinery and other industries.
| Specific Gravity | 2.6-2.8 g/cm3 | Bend Strength | >300 kg |
| Hardne | >9 MOH'S | Tensile Strength | >150 kg/cm3 |
| Porosity Rate | <30% | Thermal Radiance | 0.85 |
| Temperature (℃) | Linear Expansion Cofficient (10-6m/℃) | Thermal Conductivity (kcal/Mgr ℃) | Specific Heat (cal/g ℃) |
| 0 | / | / | 0.148 |
| 300 | 3.8 | / | / |
| 400 | / | / | 0.255 |
| 600 | 4.3 | 14-18 | / |
| 800 | / | / | 0.294 |
| 900 | 4.5 | / | / |
| 1100 | / | 12-16 | / |
| 1200 | 4.8 | / | 0.325 |
| 1300 | / | 10-14 | / |
| 1500 | 5.2 | / | / |
| Atomosphere | Furnace Temp(℃) | Surface Load (W/cm2) | Impact on the Element | Solution |
| Ammonia | 1290 | 3.8 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| CO2 | 1450 | 3.1 | Erosion of elements | Protecting by quartz tube |
| tube18%CO | 1500 | 4.0 | No action | |
| 20%CO | 1370 | 3.8 | Adsorbing C grains to act on SiO2 protective film | |
| Halogen | 704 | 3.8 | Attacking SiC and decressing SiO2 protective film | Protecting by quartz tube |
| Hydrocarbon | 1310 | 3.1 | Adsorbing C grains causes hot pollution | Filling with enough air |
| Hydrogen | 1290 | 3.1 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| Menthane | 1370 | 3.1 | Adsorbing C grains causes hot pollution | |
| N | 1370 | 3.1 | Acting with SiC forms SiN insulating layer | |
| Na | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| SO2 | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| Vacuum Atomosphere | 1204 | 3.8 | ||
| Oxygen | 1310 | 3.8 | SiC is oxided | |
| Water (Different Contents) | 1090~1370 | 3.1~3.6 | Acting on SiC forms hydtate of Sillicon |