HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Silicon nitrides (Si3N4) feature an excellent combination of material properties. They are nearly as light as silicon carbide (SiC), but their microstructure gives them excellent thermal shock resistance and their high fracture toughness makes them resistant to impacts and shocks.
All these combinations make the material irreplaceable in the production of corrosion-resistant, wear-resistant and heat-resistant products for a variety of industries.
| Properties | Brand of material |
| Composition | SN |
| Si3N4 | |
| Density, g/sm3 | 3,2-3,3 |
| Isolated porosity, % | 0 |
| Hardness, GPa | 13,5-14,0 |
| Bending strength, MPa | 280-310 |
| Compressive strength, MPa | 3700-3900 |
| Thermal conductivity at 20-100°С, W/mK | 20-30 |
| Coefficient of linear thermal expansion at 20-1000°С, 10-6К-1 | 2,6-3,3 |
| Maximum operating temperature °С Oxidative environment Reducing or inert environment |
1200 160 |
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |