HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Manufacturer from China
Verified Supplier
5 Years
Home / Products / Technical Ceramic Parts /

Doped Gadolinium Aluminum Gallium Garnet GAGG Scintillation Crystal

Contact Now
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Visit Website
City:zhengzhou
Province/State:henan
Country/Region:china
Contact Person:Daniel
Contact Now

Doped Gadolinium Aluminum Gallium Garnet GAGG Scintillation Crystal

Ask Latest Price
Video Channel
Brand Name :ZG
Model Number :MS
Certification :CE
Place of Origin :CHINA
MOQ :1 piece
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :10000 pieces per month
Delivery Time :3 working days
Packaging Details :Strong wooden box for Global shipping
Application :Medical imaging,Nuclear energy and high energy physics, Scanning electron microscope (SEM)
Products :Cerium doped gadolinium aluminum gallium garnet (CE: GAGG)
Advantage :High density
Diameter :Φ3-40mm
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

CE doped gadolinium aluminum gallium garnet (CE: GAGG), Scintillation crystal

Cerium doped gadolinium aluminum gallium garnet (CE: GAGG) is a kind of crystal with excellent scintillation properties. CE: GAGG crystal is characterized by high density, high transmittance, large effective atomic number, high light yield, fast decay time, good energy resolution and stable physicochemical properties. Compared with the traditional scintillation crystal materials, the comprehensive performance is more excellent, and has the advantages of price and environmental protection. It has a wide range of applications in medical imaging, safety inspection, high energy physics, nuclear physics and other fields.

Main advantages:

High density

High light output

High energy resolution

No self radiation, no deliquescence

Application:

Medical imaging: X-ray computed tomography (CT), positron emission tomography (PET), etc

security check

Nuclear energy and high energy physics

Scanning electron microscope (SEM)

Material properties

Molecular formula Ce:Gd3Al2Ga3O12
Growth method Czochralski

Atomic number

54.4
Density 6.63g/cm³
Hardness 8 Mohs
Melting point 1850℃

Coefficient of thermal expansion

TBA*10-6

Technical parameter

Crystal orientation <0.5°

Diameter tolerance

±0.05mm

Parallelism

<30″
Perpendicularity <15′
Chamfering <0.1*45°
verticalityMaximum size Maxψ60mm
Inquiry Cart 0