HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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GaAs Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .
Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs .
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| GaAs/GaAs | GaAs wafer | Up to 4 inch |
| LT-GaAs/GaAs | GaAs wafer | Up to 4 inch |
| AlAs/GaAs | GaAs wafer | Up to 4 inch |
| InAs/GaAs | GaAs wafer | Up to 4 inch |
| AlGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaP/GaAs | GaAs wafer | Up to 4 inch |
| GaAsP/GaAs | GaAs wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-GaAs layer |
| Active layer | n-AlGaAs layer |
| Space layer | i-AlGaAs layer |
| Buffer layer | i-GaAs layer |
| Substrate | Ø 3" / Ø 4" GaAs wafer |