HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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City:zhengzhou
Province/State:henan
Country/Region:china
Contact Person:Daniel
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2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry

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Brand Name :ZG
Model Number :MS
Certification :CE
Place of Origin :CHINA
MOQ :1 piece
Price :USD10/piece
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :10000 pieces per month
Delivery Time :3 working days
Packaging Details :Strong wooden box for Global shipping
Application :Semiconductor device , Microelectronics , Sensor , Solar cell , IR optics.
Diameter :Ø 2" / Ø 3" / Ø 4"
Thickness :500 um ~ 625 um
Grade :Electronics grade
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Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch

We are a worldwide supplier of single crystal Ge wafer ( Germanium wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch . Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications . We can provide low dislocation and epi ready Ge wafers to meet your unique germanium needs . Ge wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room enviroment , with a good quality control system , We are dedicated to providing clean and high quality Ge wafer products . We can offer both electronics grade and IR grade Ge wafer , please contact us for more Ge product information

Single Crystal Germanium Wafer Capability

SWI can offer both electronics grade and IR grade Ge wafer and Ge ingot , please contact us for more Ge product information .

Conductivity Dopant Resistivity
( ohm-cm )
Wafer Size
NA Undoped >= 30 Up to 4 inch
N type Sb 0.001 ~ 30 Up to 4 inch
P type Ga 0.001 ~ 30 Up to 4 inch

Applications:

Semiconductor device , Microelectronics , Sensor , Solar cell , IR optics.

Ge Wafer Properties

Chemical formula Ge
Crystal structure Cubic
Lattice parameter a=0.565754
Density ( g / cm3 ) 5.323
Thermal conductivity 59.9
Melting point ( °C ) 937.4

Product Specification

Growth Czochralski
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 500 um ~ 625 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type
Dopant Gallium / Antimony / Undoped
Resistivity 0.001 ~ 30 ohm-cm
Surface SSP / DSP
TTV <= 10 um
Bow / Warp <= 40 um
Grade Electronics grade

2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry

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