HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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SOI Wafer ( Silicon-on-Insulator )
We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .
SOI Wafer Application
| High-speed ICs | High-temperature ICs |
| Low-power ICs | Low-voltage ICs |
| Microwave components | Power device |
| MEMS | Semiconductor |
Product Specification
| Method | Fusion bonding |
|---|---|
| Diameter | Ø 4"/ Ø 6" / Ø 8" |
| Device thickness | 2 um ~ 300 um |
| Tolerance | +/- 0.5 um ~ 2 um |
| Orientation | <100> / <111> / <110> or others |
| Conductivity | P - type / N - type / Intrinsic |
| Dopant | Boron / Phosphorous / Antimony / Arsenic |
| Resistivity | 0.001 ~ 100000 ohm-cm |
| Oxide thickness | 500A ~ 4 um |
| Tolerance | +/- 5% |
| Handle wafer | >= 300 um |
| Surface | Double sides polished |
| Coating | Oxide and nitride can be supplied on both sides of SOI wafer |
