HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Manufacturer from China
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5 Years
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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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City:zhengzhou
Province/State:henan
Country/Region:china
Contact Person:Daniel
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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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Brand Name :ZG
Model Number :MS
Certification :CE
Place of Origin :CHINA
MOQ :10000 pieces
Price :Negotiation
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :10000 pieces per month
Delivery Time :5-8 working days
Packaging Details :Strong wooden box for global shipping
Material :silicon carbide
Color :Black
Size :Customized
Feature :Excellent thermal conductivity Resistant to plasma shock Good temperature uniformity
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Silicon Carbide (SiC) Block

Silicon Carbide Block Good Thermal Conductivity Good Thermal Shock Resistance Good Abrasion Resistance

Due to our large output capacity and strong molding ability for customization production, our company has exported our products to many international markets. Our products are certified according to requirements of customers.

We continue to innovate, improve, and enhance as well as integrate the resources internally and externally to strengthen the flexibility of our company and the competitiveness of our products, and provide both old and new customers with best service.


Application:

  1. Grinding process of semiconductor silicon wafer

  2. Grinding process of LED sapphire wafer

  3. Thinning process of LED wafer


Feature requirements:

  1. Good thermal conductivity

  2. Good thermal shock resistance

  3. Good abrasion resistance

Performance UNIT HS-A HS-P HS-XA
Grain Size μm 4-10 4-10 4-10
Density g/cm ≥3.1 3.0-3.1 >3.1
Hardness (Knoop) Kg/mm² 2800 2800 2800
Flexural Strength 4 pt @ RT MPa*m1/2 385 240 420
*10³1b/in² 55 55 55
Compressive Strength @ RT Mpa 3900   3900
*10³1b/in² 560 560
Modulus of Elasticity @ RT Gpa 410 400 410
*10³1b/in² 59 58 59
Weibull Modulus (2 parameter)   8 19 12
Poisson Ratio   0.14 0.14 0.14
Fracture Toughness @ RT Double Torsion & SENB MPa*m1/2 8 8 8
*1³1b/in²in½
Coefficient of Thermal Expansion RT to 700℃ X10-6mm/mmK 4.02 4.2 4.02
X10-6 in/in°F 2.2 2.3 2.2
Maximum Service Temp.Air Mean Specific Heat @ RT °C 1900 1900 1900
J/gmK 0.67 0.59 0.67
Thermal Conductivity @ RT W/mK 125.6 110 125.6
Btu/ft h°F 72.6 64 72.6
@200°C W/mK 102.6   102.6
Btu/ft h°F 59.3 59.3
@400°C W/mK 77.5   77.5
Btu/ft h°F 44.8 44.8
Permeability @ RT to 1000°C 31MPa below No gas leakage
Electrical Resistivity @ RT Ohm-cm 102-106 N/A 102-106
Emissivity   0.9 0.9 0.9


Why better than others:

  1. Available in various specifications, also provide customized services

  2. Stable quality and fast delivery

  3. SiC block diameter from 120mm to 480mm in stock

  4. Save time of sample loading and unloading process

  5. Acceptable higher thinning rate

SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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